Deepankur Thureja

Reports electrically-defined quantum dots for excitons in monolayer semiconductors where discrete exciton energies can be tuned with gate voltages; resonance fluorescence measurements show spectral jumps and blinking verifying zero-dimensional character, enabling exploration of quantum confined bosonic modes dominated by exciton–exciton interactions.

Demonstrates electrically controlled quantum confinement of neutral excitons in two-dimensional semiconductors using gate-defined in-plane electric fields and interactions with free charges, achieving confinement lengths below 10 nm and observing discrete voltage-dependent excitonic states; discusses extension to tunable zero-dimensional exciton structures and implications for single-photon sources and on-chip quantum photonics.

Describes fabrication of freeform hBN landscapes using thermal scanning-probe lithography and reactive-ion etching to create photonic microelements, optical microcavities, and Fourier surfaces for electrons, enabling new device opportunities in 2D polaritonics, twistronics, and quantum materials.

Inventor/author name appears on patent application records concerning confinement of neutral excitons in semiconductor layer structures and related nano-structured elements (patent file wrapper entries present).