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Deepanjan Datta

Deepanjan Datta

CTO and co‑founder; PhD in Electrical & Electronics Engineering

La Jolla, United States
Bengaluru, Karnataka, India

Summary

Expert in spintronics and quantum transport modeling: Datta's PhD dissertation and multiple publications present NEGF-based models for magnetic tunnel junctions and spin-transfer torque, demonstrating a sustained research focus on theoretical and simulation approaches to spintronic devices. purdue+2
Inventor and translator of research into products: He is listed as an inventor on patents for both spintronics-related simulation tools (GlobalFoundries) and for a wearable hemodynamic monitoring device tied to HemodynamiQ, indicating work that moves from device modelling to applied product/IP. google+1
Startup cofounder/CTO building clinical wearable tech: As cofounder and CTO of HemodynamiQ and HemodynamiQ Wearables, he leads efforts to develop an IoT-enabled wearable patch and ML analytics aimed at early detection and remote monitoring of heart‑failure parameters. hemodynamiq+2
Industry experience in semiconductor device modeling: Affiliation with GlobalFoundries and authorship on device- and circuit-level publications and patents show practical semiconductor and TCAD modeling experience bridging academic and industrial work. ieee+2

Work

Education

Projects

Writing

US20220296165A1 — Wearable hemodynamic monitoring device and system

January 1, 2022

Patent application (inventor: Deepanjan DATTA) describing a wearable patch and system for hemodynamic monitoring and remote telemetry to assess cardiovascular variables and detect heart-failure-related changes.

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Non‑Equilibrium Green's Function Based Circuit Models for Coherent Spin Devices

January 1, 2019

Journal article developing 4x4 spin-generalized conductance/circuit formulations based on NEGF for use in circuit-level models of spintronic and nano‑magnetic devices.

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US20160171135A1 — System and method for modular simulation of spin transfer torque magnetic random access memory devices

January 1, 2016

Patent application describing a library of physics-based functional blocks and a spin-device circuit approach to simulate STT‑MRAM devices, mapping magnetic stack elements to a configurable spin device circuit.

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Modeling of spin transport in MTJ devices

January 1, 2012

PhD dissertation presenting an NEGF-based transport model for Magnetic Tunnel Junction (MTJ) devices that models charge and spin currents, explains bias dependencies of spin torques, and proposes device concepts and compact models for STT‑RAM.

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Quantitative model for TMR and spin-transfer torque in MTJ devices

January 1, 2010

Conference paper (IEDM) presenting an NEGF-based model for spin-transfer torque (STT) in MTJ devices that matches diverse experimental measurements (resistance, torques) and explains bias-dependent behavior.

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